PART |
Description |
Maker |
1SV229 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type Variable Capacitance Diode VCO for UHF Band Radio
|
Toshiba Semiconductor
|
KDV152 KDV152M |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR CB/C/P PLL) VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR CB,C/P PLL) 变容二极管外延硅平面二极管(振荡器的文件,碳/磷锁相环
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)] KEC Holdings
|
HVU17 |
Diodes>Variable Capacitance Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
HVD362 |
Diodes>Variable Capacitance Variable Capacitance Diode for VCO
|
RENESAS[Renesas Electronics Corporation]
|
HVB350BYP |
Silicon Epitaxial Planar Variable Capacitance Diode for VCO 16.25 pF, SILICON, VARIABLE CAPACITANCE DIODE CMPAK-4
|
Renesas Electronics Corporation Samsung Semiconductor Co., Ltd.
|
HVD372B HVD372B06 HVD372B-06 |
Variable Capacitance Diode for VCO 16 pF, SILICON, VARIABLE CAPACITANCE DIODE
|
Renesas Electronics Corporation
|
HVL355C |
6.82 pF, SILICON, VARIABLE CAPACITANCE DIODE Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
HVC379B |
Variable Capacitance Diode for VCO
|
HITACHI[Hitachi Semiconductor]
|
HVD369B |
Variable Capacitance Diode for VCO
|
RENESAS[Renesas Electronics Corporation]
|
HVD355B |
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
HVC358B |
Variable Capacitance Diode for VCO
|
HITACHI[Hitachi Semiconductor]
|